Dielectric confinement effect for exciton and biexciton states in PbI4-based two-dimensional semiconductor structures

T. Ishihara, X. Hong, J. Ding, A. V. Nurmikko

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

We have studied the role of dielectric confinement for enhancing excitonic effects in layered PbI4-based compounds. In particular, we demonstrate that unusually strong biexciton effects are readily observable (binding energy on the order of 50 meV) and that the large excitonic binding (∼ 300 meV) can be modified by chemically adjusting the dielectric constant of the alkylammonium barrier layers.

Original languageEnglish
Pages (from-to)323-326
Number of pages4
JournalSurface Science
Volume267
Issue number1-3
DOIs
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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