Dielectric breakdown caused by hole-induced-defect in thin SiO 2 films

Akinobu Teramoto, Kiyoteru Kobayashi, Yasuji Matsui, Makoto Hirayama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The dielectric breakdown induced by substrate hot-hole injection has been investigated using p-channel MOSFETs with the gate oxide of the thickness ranging from 60 to 120 Å and it has been revealed that the breakdown is induced by hole injection from the Si substrate even at low oxide fields. The positive charge to breakdown (Q PBD ) calculated from integrating the hole current is independent of the oxide field, but decreases rapidly with decreasing the oxide thickness. Also, it has been shown that the positive charges in SiO 2 film induced by hole injection are removed by the annealing at 250°C, while the hole trap centers are not disappeared. This suggests that the dielectric breakdown occurs at a weak oxide spot, which can capture the positive charges.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 1997 Jun 2
Externally publishedYes


  • Dielectric breakdown
  • Gate oxide
  • Hole-induced defect
  • Hot-hole injection
  • Wearout mechanism

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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