Diamond probe with silicon-based piezo strain gauge for high density data storage using scanning nonlinear dielectric microscopy

Hirokazu Takahashi, Atsushi Onoe, Takahito Ono, Yasuo Cho, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper reports on the development of diamond probes integrated with a Si-based piezoresistive strain gauge for ultra-high-density ferroelectric data storage beyond 1 Tbit/inch2 with scanning nonlinear dielectric microscopy (SNDM). Only the tip of the probe was composed of diamond, and a cantilever integrated with the piezoresistive sensor was made of Si. The electrophoretic deposition process for diamond growth improved the production yield for sharp diamond tips. Topographic imaging using AFM was demonstrated at a constant force mode to verify the performance of the fabricated probe with the piezo strain gauge as a force sensor. SNDM experiments on a LiTaO3 substrate were performed. Clear contrast of SNDM image was obtained using the diamond probe.

Original languageEnglish
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages1338-1341
Number of pages4
Volume2
DOIs
Publication statusPublished - 2005 Nov 9
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: 2005 Jun 52005 Jun 9

Other

Other13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
CountryKorea, Republic of
CitySeoul
Period05/6/505/6/9

Keywords

  • Data storage
  • Diamond
  • Ectrophoretic deposition process
  • Piezo strain gauge
  • Scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Takahashi, H., Onoe, A., Ono, T., Cho, Y., & Esashi, M. (2005). Diamond probe with silicon-based piezo strain gauge for high density data storage using scanning nonlinear dielectric microscopy. In TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers (Vol. 2, pp. 1338-1341). [3E4.6] https://doi.org/10.1109/SENSOR.2005.1497328