Diamond micro-Schottky emitter with an integrated heating element

Joon Hyung Bae, Phan Ngoe Minh, Takahito Ono, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper describes the fabrication and evaluation of a boron-doped diamond micro Schottky emitter for micro-electron sources. We fabricated an emitter tip on the top of the cantilever-type heating element using selective diamond deposition and silicon molding techniques. The fabricated diamond emitter shows high brightness emission pattern of an emitting current of 800 nA with tip-anode (screen) electric field of 0.4 V/μm and tip heating power of 225 mW. This kind of structure can be useful for electron sources with potential advantages of low threshold voltage and long life time stability.

Original languageEnglish
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages778-781
Number of pages4
ISBN (Electronic)0780377311, 9780780377318
DOIs
Publication statusPublished - 2003 Jan 1
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: 2003 Jun 82003 Jun 12

Publication series

NameTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume1

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
CountryUnited States
CityBoston
Period03/6/803/6/12

Keywords

  • Brightness
  • Carbon nanotubes
  • Electron beams
  • Electron emission
  • Fabrication
  • Heating
  • Lithography
  • Scanning electron microscopy
  • Silicon
  • Stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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