Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, G. Ghibaudo

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A diagnostic procedure for the contact low-frequency noise sources of staggered organic transistors is presented. Like the conventional process for channel noise, the two models of carrier number fluctuations and Hooge mobility fluctuations are concerned. Both models apply to bis(triisopropylsilylethynyl) pentacene transistors at lower and higher current densities, where the contact defect density is 1000 times higher than that in the channel and a Hooge parameter around 1 is obtained, respectively. The Hooge mobility fluctuations model well accounts for the contact noise in pentacene transistors with a Hooge parameter in the range of 0.5-3.

Original languageEnglish
Article number033505
JournalApplied Physics Letters
Volume98
Issue number3
DOIs
Publication statusPublished - 2011 Jan 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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