dHvA effect of CeRu2Si2 under pressure

M. Takashita, H. Aoki, C. J. Haworth, T. Matsumoto, T. Terashima, S. Uji, C. Terakura, T. Miura, K. Maezawa, R. Settai, Y. Onuki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We report pressure dependence of the Fermi surfaces (FSs) in CeRu2Si2 below and above the metamagnetic transition field (Hm). Below Hm, the dHvA frequencies arising from hole FSs decrease by 20% on application of 6 kbar, while that from an electron FS increases by 10%. The pressure dependence of the frequencies above Hm is much larger than that below Hm. The results are discussed in comparison with those of ferromagnetic reference material CeRu2Ge2.

Original languageEnglish
Pages (from-to)417-418
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Issue numberPART 1
Publication statusPublished - 1998 Jan
Externally publishedYes


  • De Haas-van Alphen effect
  • Heavy-fermion compounds
  • Metamagnetism
  • Pressure effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'dHvA effect of CeRu2Si2 under pressure'. Together they form a unique fingerprint.

Cite this