Device size dependence of resistance switching performance in metal/manganite/metal trilayers

G. Sugano; I. Ohkubo; T. Harada; T. Ohnishi; M. Lippmaa; Y. Matsumoto; H. Koinuma; M. Oshima

doi:10.1016/j.mseb.2009.11.022

Device size dependence of resistance switching performance in metal/manganite/metal trilayers

G. Sugano, I. Ohkubo, T. Harada, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, M. Oshima

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have fabricated epitaxial Pr_0.8Ca_0.2MnO ₃ (PCMO) insulator layers sandwiched between Al top electrodes and epitaxial La_0.6Sr_0.4MnO₃ bottom electrode layers on (LaAlO₃)_0.3-(Sr₂AlTaO ₆)_0.7 (1 0 0) substrates. Various sizes of metal/insulator/metal device structures were formed by photolithography and Ar ion milling. Device size dependence of Al/PCMO interface resistances was well fitted by series-parallel equivalent circuit, indicating several types of different resistance components exist at the Al/PCMO interfaces. These different resistance components suggest that defects might distribute inhomogeneously at the Al/PCMO interfaces which exhibit the resistance switching.

Original language	English
Pages (from-to)	3-6
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	173
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2009.11.022
Publication status	Published - 2010 Jan 1
Externally published	Yes

Keywords

Metal/insulator interfaces
Resistance random access memory (ReRAM)
Resistance switching
Transition metal oxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2009.11.022

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title = "Device size dependence of resistance switching performance in metal/manganite/metal trilayers",

abstract = "We have fabricated epitaxial Pr0.8Ca0.2MnO 3 (PCMO) insulator layers sandwiched between Al top electrodes and epitaxial La0.6Sr0.4MnO3 bottom electrode layers on (LaAlO3)0.3-(Sr2AlTaO 6)0.7 (1 0 0) substrates. Various sizes of metal/insulator/metal device structures were formed by photolithography and Ar ion milling. Device size dependence of Al/PCMO interface resistances was well fitted by series-parallel equivalent circuit, indicating several types of different resistance components exist at the Al/PCMO interfaces. These different resistance components suggest that defects might distribute inhomogeneously at the Al/PCMO interfaces which exhibit the resistance switching.",

keywords = "Metal/insulator interfaces, Resistance random access memory (ReRAM), Resistance switching, Transition metal oxide",

author = "G. Sugano and I. Ohkubo and T. Harada and T. Ohnishi and M. Lippmaa and Y. Matsumoto and H. Koinuma and M. Oshima",

year = "2010",

month = jan,

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doi = "10.1016/j.mseb.2009.11.022",

language = "English",

volume = "173",

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issn = "0921-5107",

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T1 - Device size dependence of resistance switching performance in metal/manganite/metal trilayers

AU - Sugano, G.

AU - Ohkubo, I.

AU - Harada, T.

AU - Ohnishi, T.

AU - Lippmaa, M.

AU - Matsumoto, Y.

AU - Koinuma, H.

AU - Oshima, M.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - We have fabricated epitaxial Pr0.8Ca0.2MnO 3 (PCMO) insulator layers sandwiched between Al top electrodes and epitaxial La0.6Sr0.4MnO3 bottom electrode layers on (LaAlO3)0.3-(Sr2AlTaO 6)0.7 (1 0 0) substrates. Various sizes of metal/insulator/metal device structures were formed by photolithography and Ar ion milling. Device size dependence of Al/PCMO interface resistances was well fitted by series-parallel equivalent circuit, indicating several types of different resistance components exist at the Al/PCMO interfaces. These different resistance components suggest that defects might distribute inhomogeneously at the Al/PCMO interfaces which exhibit the resistance switching.

AB - We have fabricated epitaxial Pr0.8Ca0.2MnO 3 (PCMO) insulator layers sandwiched between Al top electrodes and epitaxial La0.6Sr0.4MnO3 bottom electrode layers on (LaAlO3)0.3-(Sr2AlTaO 6)0.7 (1 0 0) substrates. Various sizes of metal/insulator/metal device structures were formed by photolithography and Ar ion milling. Device size dependence of Al/PCMO interface resistances was well fitted by series-parallel equivalent circuit, indicating several types of different resistance components exist at the Al/PCMO interfaces. These different resistance components suggest that defects might distribute inhomogeneously at the Al/PCMO interfaces which exhibit the resistance switching.

KW - Metal/insulator interfaces

KW - Resistance random access memory (ReRAM)

KW - Resistance switching

KW - Transition metal oxide

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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ER -

Device size dependence of resistance switching performance in metal/manganite/metal trilayers

Abstract

Keywords

ASJC Scopus subject areas

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