Device size dependence of resistance switching performance in metal/manganite/metal trilayers

G. Sugano, I. Ohkubo, T. Harada, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, M. Oshima

Research output: Contribution to journalArticle

Abstract

We have fabricated epitaxial Pr0.8Ca0.2MnO 3 (PCMO) insulator layers sandwiched between Al top electrodes and epitaxial La0.6Sr0.4MnO3 bottom electrode layers on (LaAlO3)0.3-(Sr2AlTaO 6)0.7 (1 0 0) substrates. Various sizes of metal/insulator/metal device structures were formed by photolithography and Ar ion milling. Device size dependence of Al/PCMO interface resistances was well fitted by series-parallel equivalent circuit, indicating several types of different resistance components exist at the Al/PCMO interfaces. These different resistance components suggest that defects might distribute inhomogeneously at the Al/PCMO interfaces which exhibit the resistance switching.

Original languageEnglish
Pages (from-to)3-6
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume173
Issue number1-3
DOIs
Publication statusPublished - 2010 Jan 1
Externally publishedYes

Keywords

  • Metal/insulator interfaces
  • Resistance random access memory (ReRAM)
  • Resistance switching
  • Transition metal oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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