Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor

Tamio Shimatani; Takuji Matsumoto; Takeshi Hashimoto; Noriji Kato; So Yamada; Mitsumasa Koyanagi

doi:10.1143/JJAP.33.619

Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor

Tamio Shimatani, Takuji Matsumoto, Takeshi Hashimoto, Noriji Kato, So Yamada, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.

Original language	English
Pages (from-to)	619-622
Number of pages	4
Journal	Japanese journal of applied physics
Volume	33
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.33.619
Publication status	Published - 1994

Keywords

Mobility model
Polycrystalline silicon
Quasi three-dimensional temperature analysis
Self-heating effect
Short- channel effect
Thin-film transistor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.33.619

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title = "Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor",

abstract = "A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.",

keywords = "Mobility model, Polycrystalline silicon, Quasi three-dimensional temperature analysis, Self-heating effect, Short- channel effect, Thin-film transistor",

author = "Tamio Shimatani and Takuji Matsumoto and Takeshi Hashimoto and Noriji Kato and So Yamada and Mitsumasa Koyanagi",

year = "1994",

doi = "10.1143/JJAP.33.619",

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T1 - Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor

AU - Shimatani, Tamio

AU - Matsumoto, Takuji

AU - Hashimoto, Takeshi

AU - Kato, Noriji

AU - Yamada, So

AU - Koyanagi, Mitsumasa

PY - 1994

Y1 - 1994

N2 - A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.

AB - A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.

KW - Mobility model

KW - Polycrystalline silicon

KW - Quasi three-dimensional temperature analysis

KW - Self-heating effect

KW - Short- channel effect

KW - Thin-film transistor

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