Abstract
A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.
| Original language | English |
|---|---|
| Pages (from-to) | 619-622 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1994 Jan 1 |
Keywords
- Mobility model
- Polycrystalline silicon
- Quasi three-dimensional temperature analysis
- Self-heating effect
- Short- channel effect
- Thin-film transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor'. Together they form a unique fingerprint.
Cite this
Shimatani, T., Matsumoto, T., Hashimoto, T., Kato, N., Yamada, S., & Koyanagi, M. (1994). Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor. Japanese journal of applied physics, 33(1), 619-622. https://doi.org/10.1143/JJAP.33.619