Device simulation with quasi three-dimensional temperature analysis for short-channel poly-Si thin-film transistor

Tamio Shimatani, Takuji Matsumoto, Takeshi Hashimoto, Noriji Kato, So Yamada, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. We could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT.

Original languageEnglish
Pages (from-to)619-622
Number of pages4
JournalJapanese journal of applied physics
Volume33
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1

Keywords

  • Mobility model
  • Polycrystalline silicon
  • Quasi three-dimensional temperature analysis
  • Self-heating effect
  • Short- channel effect
  • Thin-film transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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