Device modeling techniques for high-frequency circuits design using bond-based design at over 100 GHz

Ryuichi Fujimoto, Kyoya Takano, Mizuki Motoyoshi, Uroschanit Yodprasit, Minoru Fujishima

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Device modeling techniques for high-frequency circuits operating at over 100 GHz are presented. We have proposed the bond-based design as an accurate high-frequency circuit design method. Because layout parasitic extractions (LPE) are not required in the bond-based design, it can be applied high-frequency circuit design at over 100 GHz. However, customized device models are indispensable for the bond-based design. In this paper, device modeling techniques for high-frequency circuit design using the bond-based design are proposed. The customized device model for MOSFETs, transmission lines and pads are introduced. By using customized device models, the difference between the simulated and measured gains of an amplifier is improved to less than 0.6 dB at 120 GHz.

Original languageEnglish
Pages (from-to)589-597
Number of pages9
JournalIEICE Transactions on Electronics
VolumeE94-C
Issue number4
DOIs
Publication statusPublished - 2011 Apr
Externally publishedYes

Keywords

  • Bond-based design
  • Device model
  • MOSFET
  • Millimeter wave
  • Pad
  • Transmission line

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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