Device model for graphene nanoribbon phototransistor

Victor Ryzhii, Vladimir Mitin, Maxim Ryzhii, Nadezhda Ryabova, Taiichi Otsuji

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that QNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.

Original languageEnglish
Pages (from-to)630021-630023
Number of pages3
JournalApplied Physics Express
Volume1
Issue number6
DOIs
Publication statusPublished - 2008 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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