Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems

Amine El Moutaouakil, Tetsuya Suemitsu, Taiichi Otsuji, Hadley Videlier, Stephane Albon Boubanga Tombet, Dominique Coquillat, Wojciech Knap

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on nonresonant detection of terahertz radiation using our original InGaP/InGaAs/GaAs plasmon-resonant high-electron-mobility transistor having a dual grating gate (DGG) structure. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. Using a device-loading model, the intrinsic responsivity was extracted and was dependent on the polarization of the incident THz wave. The device exhibited highest response when the electric-field vector of the incident THz radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity shows a clear beam focus centred on the transistor position, which proves the appropriate coupling of the THz radiation to the device, due to the DGG structure. The device also showed a high intrinsic responsivity of ~90 V/W and a noise equivalent power (NEP) as low as ~10-10 WHz-0.5.

Original languageEnglish
Pages (from-to)346-348
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

Keywords

  • Detection
  • Noise-equivalent power
  • Responsivity
  • Terahertz

ASJC Scopus subject areas

  • Condensed Matter Physics

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