Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs

Y. C. Lin; Edward Yi Chang; H. Yamaguchi; Y. Hirayama; X. Y. Chang; C. Y. Chang

doi:10.1109/LED.2006.877307

Device linearity comparison of uniformly doped and δ-doped In_0.52Al_0.48As/In_0.6Ga_0.4As metamorphic HEMTs

Y. C. Lin, Edward Yi Chang, H. Yamaguchi, Y. Hirayama, X. Y. Chang, C. Y. Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The uniformly doped and the δ-doped In_0.52 Al_0.48As/In_0.6Ga_0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (G_m) versus drain-to-source current (I_DS) curve and much better linearity with higher IP3 and higher IP3-to-P_dc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

Original language	English
Pages (from-to)	535-537
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	7
DOIs	https://doi.org/10.1109/LED.2006.877307
Publication status	Published - 2006 Jul
Externally published	Yes

Keywords

InAlAs/InGaAs
Linearity
Metamorphic high-electron mobility transistor (MHEMT)
Uniformly doped MHEMT
δ-doped MHEMT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2006.877307

Cite this

@article{c22799edbde1456687657a3548726c36,

title = "Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs",

abstract = "The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.",

keywords = "InAlAs/InGaAs, Linearity, Metamorphic high-electron mobility transistor (MHEMT), Uniformly doped MHEMT, δ-doped MHEMT",

author = "Lin, {Y. C.} and Chang, {Edward Yi} and H. Yamaguchi and Y. Hirayama and Chang, {X. Y.} and Chang, {C. Y.}",

note = "Funding Information: Manuscript received February 14, 2006; revised March 29, 2006. This work was supported by the Ministry of Education, the Ministry of Economic Affairs, and the National Science Council of the Republic of China under Contracts NSC 94-2752-E-009-001-PAE and 94-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. del Alamo.",

year = "2006",

month = jul,

doi = "10.1109/LED.2006.877307",

language = "English",

volume = "27",

pages = "535--537",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

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T1 - Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs

AU - Lin, Y. C.

AU - Chang, Edward Yi

AU - Yamaguchi, H.

AU - Hirayama, Y.

AU - Chang, X. Y.

AU - Chang, C. Y.

N1 - Funding Information: Manuscript received February 14, 2006; revised March 29, 2006. This work was supported by the Ministry of Education, the Ministry of Economic Affairs, and the National Science Council of the Republic of China under Contracts NSC 94-2752-E-009-001-PAE and 94-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. del Alamo.

PY - 2006/7

Y1 - 2006/7

N2 - The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

AB - The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

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KW - Linearity

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KW - Uniformly doped MHEMT

KW - δ-doped MHEMT

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