Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs

Y. C. Lin; Edward Yi Chang; H. Yamaguchi; Y. Hirayama; X. Y. Chang; C. Y. Chang

doi:10.1109/LED.2006.877307

Device linearity comparison of uniformly doped and δ-doped In_0.52Al_0.48As/In_0.6Ga_0.4As metamorphic HEMTs

Y. C. Lin, Edward Yi Chang, H. Yamaguchi, Y. Hirayama, X. Y. Chang, C. Y. Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The uniformly doped and the δ-doped In_0.52 Al_0.48As/In_0.6Ga_0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (G_m) versus drain-to-source current (I_DS) curve and much better linearity with higher IP3 and higher IP3-to-P_dc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

Original language	English
Pages (from-to)	535-537
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	7
DOIs	https://doi.org/10.1109/LED.2006.877307
Publication status	Published - 2006 Jul 1
Externally published	Yes

Keywords

InAlAs/InGaAs
Linearity
Metamorphic high-electron mobility transistor (MHEMT)
Uniformly doped MHEMT
δ-doped MHEMT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs",

abstract = "The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.",

keywords = "InAlAs/InGaAs, Linearity, Metamorphic high-electron mobility transistor (MHEMT), Uniformly doped MHEMT, δ-doped MHEMT",

author = "Lin, {Y. C.} and Chang, {Edward Yi} and H. Yamaguchi and Y. Hirayama and Chang, {X. Y.} and Chang, {C. Y.}",

year = "2006",

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T1 - Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs

AU - Lin, Y. C.

AU - Chang, Edward Yi

AU - Yamaguchi, H.

AU - Hirayama, Y.

AU - Chang, X. Y.

AU - Chang, C. Y.

PY - 2006/7/1

Y1 - 2006/7/1

N2 - The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

AB - The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

KW - InAlAs/InGaAs

KW - Linearity

KW - Metamorphic high-electron mobility transistor (MHEMT)

KW - Uniformly doped MHEMT

KW - δ-doped MHEMT

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