Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs

Y. C. Lin, Edward Yi Chang, H. Yamaguchi, Y. Hirayama, X. Y. Chang, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The uniformly doped and the δ-doped In0.52 Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.

Original languageEnglish
Pages (from-to)535-537
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number7
DOIs
Publication statusPublished - 2006 Jul
Externally publishedYes

Keywords

  • InAlAs/InGaAs
  • Linearity
  • Metamorphic high-electron mobility transistor (MHEMT)
  • Uniformly doped MHEMT
  • δ-doped MHEMT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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