@inproceedings{2ff005f55edc48bc92449d14a250b052,
title = "Development of via-last 3D integration technologies using a new temporary adhesive system",
abstract = "We develop new via-last backside-via 3D integration technologies using a unique temporary adhesive system in which visible-light laser is employed for wafer debonding from glass carriers. The advanced 3D and TSV researches are driven in order to fabricate Si interposers with high-density TSVs and highly integrated 3D hetero chips at Global INTegration Initiative (GINTI) as a new system integration research center. High-TTV wafer thinning, notch-free backside via formation, and void-less bottom-up Cu electroplating are performed, and the resulting TSV daisy chains show good I-V characteristics.",
keywords = "3D integration, Deep RIE, TSV, Temporary bonding, Wafer thinning",
author = "T. Fukushima and J. Bea and M. Murugesan and Lee, {K. W.} and M. Koyanagi",
year = "2013",
month = dec,
day = "1",
doi = "10.1109/3DIC.2013.6702383",
language = "English",
isbn = "9781467364843",
series = "2013 IEEE International 3D Systems Integration Conference, 3DIC 2013",
booktitle = "2013 IEEE International 3D Systems Integration Conference, 3DIC 2013",
note = "2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 ; Conference date: 02-10-2013 Through 04-10-2013",
}