Development of via-last 3D integration technologies using a new temporary adhesive system

T. Fukushima, J. Bea, M. Murugesan, K. W. Lee, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We develop new via-last backside-via 3D integration technologies using a unique temporary adhesive system in which visible-light laser is employed for wafer debonding from glass carriers. The advanced 3D and TSV researches are driven in order to fabricate Si interposers with high-density TSVs and highly integrated 3D hetero chips at Global INTegration Initiative (GINTI) as a new system integration research center. High-TTV wafer thinning, notch-free backside via formation, and void-less bottom-up Cu electroplating are performed, and the resulting TSV daisy chains show good I-V characteristics.

Original languageEnglish
Title of host publication2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 - San Francisco, CA, United States
Duration: 2013 Oct 22013 Oct 4

Publication series

Name2013 IEEE International 3D Systems Integration Conference, 3DIC 2013

Other

Other2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
CountryUnited States
CitySan Francisco, CA
Period13/10/213/10/4

Keywords

  • 3D integration
  • Deep RIE
  • TSV
  • Temporary bonding
  • Wafer thinning

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications

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