Development of the Pixel or SOI detector for high energy physics experiments

Y. Ono, A. Ishikawa, H. Yamamoto, Y. Arai, T. Tsuboyama, Y. Onuki, A. Iwata, T. Imamura, T. Ohmoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A Silicon-On-Insulator (SOI) Technology is suitable for vertex detectors for high energy physics experiments since complex functions can be fabricated on the SOI wafer with a small amount of material thanks to the monolithic structure. We developed a new sensor processing scheme "PIXOR(PIXel OR)" for pixel detectors using a LAPIS 0.20μm SOI process. An analog signal from each pixelated sensor is divided into two dimensional directions, and 2n signal channels from a small n by n pixel matrix are ORed as n column and n row channels, then the signals are processed by a readout circuit in each small matrix. This PIXOR scheme reduces the number of readout channels and avoids a deterioration of intrinsic position resolution due to large circuit area, that was a common issue for monolithic detectors. This feature allows high resolution, low occupancy and on-sensor signal processing at the same time. We present the successful results of the PIXOR readout scheme using a first prototype.

Original languageEnglish
Pages (from-to)266-269
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume731
DOIs
Publication statusPublished - 2013 Jul 29

Keywords

  • High energy physics experiment
  • Pixel detector
  • SOI

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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