Development of SOI pixel process technology

Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, R. Ichimiya, T. Kohriki, K. Tauchi, Y. Ikemoto, Y. Fujita, T. Uchida, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, J. Uchida, Y. OnukiY. Horii, H. Yamamoto, T. Tsuru, H. Matsumoto, S. G. Ryu, R. Takashima, A. Takeda, H. Ikeda, D. Kobayashi, T. Wada, H. Nagata, T. Hatsui, T. Kudo, A. Taketani, T. Kameshima, T. Hirono, M. Yabashi, Y. Furukawa, M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, T. S. Kim, M. Ohno, K. Fukuda, I. Kurachi, M. Okihara, N. Kuriyama, M. Motoyoshi

Research output: Contribution to journalArticlepeer-review

111 Citations (Scopus)

Abstract

A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 μm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors. For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.

Original languageEnglish
Pages (from-to)S31-S36
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume636
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Apr 21

Keywords

  • Particle tracking
  • Pixel
  • SOI
  • X-ray imaging

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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