Abstract
We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.
Original language | English |
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Article number | 4805576 |
Pages (from-to) | 1087-1090 |
Number of pages | 4 |
Journal | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
DOIs | |
Publication status | Published - 2009 Jun 1 |
Event | 22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy Duration: 2009 Jan 25 → 2009 Jan 29 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanical Engineering
- Electrical and Electronic Engineering