Development of skewed DRIE process and its application to electrostatic tilt mirror

M. Nakada; K. Takahashi; T. Takahashi; A. Higo; H. Fujita; H. Toshiyoshi

doi:10.1109/MEMSYS.2009.4805576

Development of skewed DRIE process and its application to electrostatic tilt mirror

M. Nakada, K. Takahashi, T. Takahashi, A. Higo, H. Fujita, H. Toshiyoshi

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.

Original language	English
Article number	4805576
Pages (from-to)	1087-1090
Number of pages	4
Journal	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
DOIs	https://doi.org/10.1109/MEMSYS.2009.4805576
Publication status	Published - 2009 Jun 1
Event	22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy Duration: 2009 Jan 25 → 2009 Jan 29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.",

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AU - Nakada, M.

AU - Takahashi, K.

AU - Takahashi, T.

AU - Higo, A.

AU - Fujita, H.

AU - Toshiyoshi, H.

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AB - We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.

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