Development of skewed DRIE process and its application to electrostatic tilt mirror

M. Nakada, K. Takahashi, T. Takahashi, A. Higo, H. Fujita, H. Toshiyoshi

    Research output: Contribution to journalConference articlepeer-review

    5 Citations (Scopus)

    Abstract

    We present a newly developed skewed-DRIE (deep reactive ion etch) process through a silicon wafer. Maximum skew angle of 25 degrees with respect to the wafer surface was obtained with a 360 micron thick silicon substrate. This technique was used to build the slanted counter electrode of 60 degrees for an electrostatic torsion mirror. Pull-in voltage was 100 volts, which was lower than that of a vertically etched counter electrode.

    Original languageEnglish
    Article number4805576
    Pages (from-to)1087-1090
    Number of pages4
    JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
    DOIs
    Publication statusPublished - 2009 Jun 1
    Event22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
    Duration: 2009 Jan 252009 Jan 29

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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