Development of silicon wafer packaging technology for deep UV LED

Hirofumi Chiba, Yukio Suzuki, Yoshiaki Yasuda, Mitsuyasu Kumagai, Takaaki Koyama, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reports a deep-ultraviolet LED (deep-UV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has advantages in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Based on simulation, further improvement of the optical output is expected by optimizing DUV-LED die mount condition.

Original languageEnglish
Pages (from-to)62-68
Number of pages7
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume214
Issue number1
DOIs
Publication statusPublished - 2021 Mar

Keywords

  • crystalline anisotropic etching
  • deep ultraviolet LED
  • hermetic sealing
  • temporary bonding
  • through-silicon via (TSV)
  • wafer-level packaging

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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