TY - GEN
T1 - Development of radiation sensor based on Pt/ZnO Schottky diode
AU - Narita, S.
AU - Nishibori, Y.
AU - Naito, H.
AU - Ito, H.
AU - Endo, H.
AU - Chiba, T.
AU - Sakemi, Yasuhiro
AU - Itoh, M.
AU - Yoshida, H.
PY - 2011
Y1 - 2011
N2 - We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 1015 protons/cm 2.
AB - We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 1015 protons/cm 2.
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U2 - 10.1109/NSSMIC.2011.6154669
DO - 10.1109/NSSMIC.2011.6154669
M3 - Conference contribution
AN - SCOPUS:84858690386
SN - 9781467301183
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 1726
EP - 1729
BT - 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Y2 - 23 October 2011 through 29 October 2011
ER -