Development of radiation sensor based on Pt/ZnO Schottky diode

S. Narita; Y. Nishibori; H. Naito; H. Ito; H. Endo; T. Chiba; Y. Sakemi; M. Itoh; H. Yoshida

doi:10.1109/NSSMIC.2011.6154669

Development of radiation sensor based on Pt/ZnO Schottky diode

S. Narita, Y. Nishibori, H. Naito, H. Ito, H. Endo, T. Chiba, Y. Sakemi, M. Itoh, H. Yoshida

Cyclotron and Radioisotope Center (CYRIC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 10¹⁵ protons/cm ².

Original language	English
Title of host publication	2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1726-1729
Number of pages	4
ISBN (Print)	9781467301183
DOIs	https://doi.org/10.1109/NSSMIC.2011.6154669
Publication status	Published - 2011 Jan 1
Event	2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain Duration: 2011 Oct 23 → 2011 Oct 29

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
ISSN (Print)	1095-7863

Other

Other	2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Country	Spain
City	Valencia
Period	11/10/23 → 11/10/29

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Access to Document

10.1109/NSSMIC.2011.6154669

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Cite this

Narita, S., Nishibori, Y., Naito, H., Ito, H., Endo, H., Chiba, T., Sakemi, Y., Itoh, M., & Yoshida, H. (2011). Development of radiation sensor based on Pt/ZnO Schottky diode. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 1726-1729). [6154669] (IEEE Nuclear Science Symposium Conference Record). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NSSMIC.2011.6154669

Development of radiation sensor based on Pt/ZnO Schottky diode. / Narita, S.; Nishibori, Y.; Naito, H.; Ito, H.; Endo, H.; Chiba, T.; Sakemi, Y.; Itoh, M.; Yoshida, H.

2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronics Engineers Inc., 2011. p. 1726-1729 6154669 (IEEE Nuclear Science Symposium Conference Record).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Narita, S, Nishibori, Y, Naito, H, Ito, H, Endo, H, Chiba, T, Sakemi, Y, Itoh, M & Yoshida, H 2011, Development of radiation sensor based on Pt/ZnO Schottky diode. in 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011., 6154669, IEEE Nuclear Science Symposium Conference Record, Institute of Electrical and Electronics Engineers Inc., pp. 1726-1729, 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011, Valencia, Spain, 11/10/23. https://doi.org/10.1109/NSSMIC.2011.6154669

Narita S, Nishibori Y, Naito H, Ito H, Endo H, Chiba T et al. Development of radiation sensor based on Pt/ZnO Schottky diode. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronics Engineers Inc. 2011. p. 1726-1729. 6154669. (IEEE Nuclear Science Symposium Conference Record). https://doi.org/10.1109/NSSMIC.2011.6154669

Narita, S. ; Nishibori, Y. ; Naito, H. ; Ito, H. ; Endo, H. ; Chiba, T. ; Sakemi, Y. ; Itoh, M. ; Yoshida, H. / Development of radiation sensor based on Pt/ZnO Schottky diode. 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronics Engineers Inc., 2011. pp. 1726-1729 (IEEE Nuclear Science Symposium Conference Record).

@inproceedings{a7ea8322b8504ff0bc4cf8d4283be543,

title = "Development of radiation sensor based on Pt/ZnO Schottky diode",

abstract = "We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 1015 protons/cm 2.",

author = "S. Narita and Y. Nishibori and H. Naito and H. Ito and H. Endo and T. Chiba and Y. Sakemi and M. Itoh and H. Yoshida",

year = "2011",

month = jan,

day = "1",

doi = "10.1109/NSSMIC.2011.6154669",

language = "English",

isbn = "9781467301183",

series = "IEEE Nuclear Science Symposium Conference Record",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1726--1729",

booktitle = "2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011",

note = "2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 ; Conference date: 23-10-2011 Through 29-10-2011",

}

TY - GEN

T1 - Development of radiation sensor based on Pt/ZnO Schottky diode

AU - Narita, S.

AU - Nishibori, Y.

AU - Naito, H.

AU - Ito, H.

AU - Endo, H.

AU - Chiba, T.

AU - Sakemi, Y.

AU - Itoh, M.

AU - Yoshida, H.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 1015 protons/cm 2.

AB - We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 1015 protons/cm 2.

UR - http://www.scopus.com/inward/record.url?scp=84858690386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858690386&partnerID=8YFLogxK

U2 - 10.1109/NSSMIC.2011.6154669

DO - 10.1109/NSSMIC.2011.6154669

M3 - Conference contribution

AN - SCOPUS:84858690386

SN - 9781467301183

T3 - IEEE Nuclear Science Symposium Conference Record

SP - 1726

EP - 1729

BT - 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011

Y2 - 23 October 2011 through 29 October 2011

ER -