Development of OXSIM2D: A Simulation Program of SiO2 Growth and Stress Generation in Thermal Oxidation Process of Silicon

Naoto Saito, Shinji Sakata, Masahiro Ikegawa, Hideo Miura, Hiroyuki Ohta, Tasuku Shimizu, Seiichi Isomae, Hiroo Masuda

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A simulation program which can calculate SiO2 growth and stress generation caused by growth in the thermal oxidation process of silicon is developed. This process is used in fabricating semiconductor devices. The oxidation process is modeled as a sequence of three primary processes as follows: diffusion of oxidizing species through an already existing SiO2 layer, Si/SiO2 boundary movement and dilatation of the transition region from silicon to SiO2. The finite-element method is used in diffusion analysis and stress analysis, and the body-fit method is used as an automatic mesh generator. In addition, stress dependency and the effect of ‘white ribbon’ on oxidation are modeled in the program to increase accuracy. Simulation results showed good agreement with experiments of some LOCOS structures with various thicknesses of the Si3N4 mask.

Original languageEnglish
Pages (from-to)2057-2062
Number of pages6
JournalTransactions of the Japan Society of Mechanical Engineers Series A
Issue number541
Publication statusPublished - 1991
Externally publishedYes


  • Computational Mechanics
  • Electronic Equipment
  • Finite-Element Method
  • Numerical Analysis
  • Oxidation
  • Semiconductor
  • Structural Analysis

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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