Development of Non-Volatile Tunnel-FET Memory as a Synaptic Device for Low-Power Spiking Neural Networks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Spiking neural network (SNN) has attracted much attention as next-generation neural networks. To realize SNN, the spike-timing-dependent plasticity (STDP) is one of the critical characteristics. In this study, we demonstrated the STDP of a biological synapse with non-volatile tunnel-field-effect transistor (FET) memory. Tunnel FET is a promising candidate to reduce the power consumption owing to the steep subthreshold characteristics. Therefore, non-volatile tunnel-FET memory we proposed has the possibility to realize low-power SNN. This paper reported the current-voltage characteristics, the memory window., and the STDP characteristics of the nonvolatile tunnel-FET memory.

Original languageEnglish
Title of host publication4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728125381
DOIs
Publication statusPublished - 2020 Apr
Event4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia
Duration: 2020 Apr 62020 Apr 21

Publication series

Name4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
CountryMalaysia
CityPenang
Period20/4/620/4/21

Keywords

  • MONOS
  • SNN
  • STDP
  • Tunnel FET

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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