Development of multi-user multi-chip SOI CMOS-MEMS processes

K. Takahashi, M. Mita, M. Nakada, D. Yamane, A. Higo, H. Fujita, H. Toshiyoshi

    Research output: Contribution to journalConference articlepeer-review

    13 Citations (Scopus)


    This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm x 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1IMHz operation.

    Original languageEnglish
    Article number4805479
    Pages (from-to)701-704
    Number of pages4
    JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
    Publication statusPublished - 2009 Jun 1
    Event22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
    Duration: 2009 Jan 252009 Jan 29

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Mechanical Engineering
    • Electrical and Electronic Engineering


    Dive into the research topics of 'Development of multi-user multi-chip SOI CMOS-MEMS processes'. Together they form a unique fingerprint.

    Cite this