Development of multi-user multi-chip SOI CMOS-MEMS processes

K. Takahashi; M. Mita; M. Nakada; D. Yamane; A. Higo; H. Fujita; H. Toshiyoshi

doi:10.1109/MEMSYS.2009.4805479

Development of multi-user multi-chip SOI CMOS-MEMS processes

K. Takahashi, M. Mita, M. Nakada, D. Yamane, A. Higo, H. Fujita, H. Toshiyoshi

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm x 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1IMHz operation.

Original language	English
Article number	4805479
Pages (from-to)	701-704
Number of pages	4
Journal	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
DOIs	https://doi.org/10.1109/MEMSYS.2009.4805479
Publication status	Published - 2009 Jun 1
Event	22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy Duration: 2009 Jan 25 → 2009 Jan 29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

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10.1109/MEMSYS.2009.4805479

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@article{0e68c8b7b94f498884ad2740daf106e6,

title = "Development of multi-user multi-chip SOI CMOS-MEMS processes",

abstract = "This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm x 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1IMHz operation.",

author = "K. Takahashi and M. Mita and M. Nakada and D. Yamane and A. Higo and H. Fujita and H. Toshiyoshi",

year = "2009",

month = jun,

day = "1",

doi = "10.1109/MEMSYS.2009.4805479",

language = "English",

pages = "701--704",

journal = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

issn = "1084-6999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 ; Conference date: 25-01-2009 Through 29-01-2009",

}

TY - JOUR

T1 - Development of multi-user multi-chip SOI CMOS-MEMS processes

AU - Takahashi, K.

AU - Mita, M.

AU - Nakada, M.

AU - Yamane, D.

AU - Higo, A.

AU - Fujita, H.

AU - Toshiyoshi, H.

PY - 2009/6/1

Y1 - 2009/6/1

N2 - This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm x 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1IMHz operation.

AB - This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm x 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1IMHz operation.

UR - http://www.scopus.com/inward/record.url?scp=65949104077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65949104077&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2009.4805479

DO - 10.1109/MEMSYS.2009.4805479

M3 - Conference article

AN - SCOPUS:65949104077

SN - 1084-6999

SP - 701

EP - 704

JO - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

JF - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

M1 - 4805479

T2 - 22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009

Y2 - 25 January 2009 through 29 January 2009

ER -

Development of multi-user multi-chip SOI CMOS-MEMS processes

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