Development of microwave-excited plasma-enhanced metal-organic chemical vapor deposition system for forming ferroelectric Sr2(Ta 1-x,Nbx)2O7 thin film on amorphous SiO2

Ichirou Takahashi, Kiyoshi Funaiwa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Sr2(Ta1-x,Nbx)2O2 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric- insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MPCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200nm)/SiO2 (10nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2V with a 5 V writing operation.

Original languageEnglish
Pages (from-to)2200-2204
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • Development of MOCVD system
  • Ferroelectric crystallization on amorphous insulator
  • Microwave-excited plasma MOCVD
  • Radical oxygen
  • Sr(Ta,Nb)o (STN)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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