TY - JOUR
T1 - Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays
AU - Esashi, Masayoshi
AU - Kojima, Akira
AU - Ikegami, Naokatsu
AU - Miyaguchi, Hiroshi
AU - Koshida, Nobuyoshi
N1 - Funding Information:
This work was supported by the “Formation of Innovation Centers for Fusion of Advanced Technologies” program, which is supported by special coordination funds for the promotion of science and technology, and by “Nanotechnology Platform Japan” through the Ministry of Education, Culture, Sports, Science and Technology. Part of this work was supported by the Japan Society for the Promotion of Science (JSPS) through the “Funding Program for World-Leading Innovative R&D on Science and Technology” (FIRST Program) of the Council for Science and Technology Policy (CSTP).
Publisher Copyright:
© 2015, Nature Publishing Group. All rights reserved.
PY - 2015
Y1 - 2015
N2 - Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices. While mask-less/direct-write electron beam (EB) lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond, it remains difficult to achieve an appropriate level of throughput. Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed. However, a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array. This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write (MPEBDW) lithography. The emitter array used in our study includes nanocrystalline-Si (nc-Si) ballistic electron emitters. Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons. The transport mechanism allows one to quickly turn electron beamlets on or off. The emitter array is a micro-electro-mechanical system (MEMS) that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor (CMOS) large-scale integration (LSI) system that controls each emitter individually. The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off. Each emitted beamlet (10 × 10 μm2 ) is converged to 10 × 10 nm2 on a target via the reduction electron optic system under development. This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array. We examine beamlets and their electron emission characteristics via a 1:1 exposure test.
AB - Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices. While mask-less/direct-write electron beam (EB) lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond, it remains difficult to achieve an appropriate level of throughput. Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed. However, a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array. This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write (MPEBDW) lithography. The emitter array used in our study includes nanocrystalline-Si (nc-Si) ballistic electron emitters. Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons. The transport mechanism allows one to quickly turn electron beamlets on or off. The emitter array is a micro-electro-mechanical system (MEMS) that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor (CMOS) large-scale integration (LSI) system that controls each emitter individually. The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off. Each emitted beamlet (10 × 10 μm2 ) is converged to 10 × 10 nm2 on a target via the reduction electron optic system under development. This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array. We examine beamlets and their electron emission characteristics via a 1:1 exposure test.
KW - Direct write lithography
KW - Electron beam lithography
KW - Electron emitter array
KW - Multiple electron beams
KW - Nanocrystalline
KW - Si
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U2 - 10.1038/micronano.2015.29
DO - 10.1038/micronano.2015.29
M3 - Review article
AN - SCOPUS:85043659352
VL - 1
JO - Microsystems and Nanoengineering
JF - Microsystems and Nanoengineering
SN - 2055-7434
M1 - 15029
ER -