Development of massive parallel electron beam write system

Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Masanori Sugata, Hideyuki Ohyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Prototype of Massively Parallel Electron Beam Write (MPEBW) system was developed for mask less lithography. A 100×100 array of nanocrystalline-silicon (nc-Si) electron emitter is controlled by an active matrix driving LSI. The LSI receives external writing bitmap data, and switches 100×100 electron beamlets on/off. The operation of the LSI was confirmed and 1/100 reduction electron optic system using the active matrix emitter array was fabricated. A 17×17 nc-Si emitter array was assembled with a 1:1 exposure test system and driven by commercially available display driver LSIs. The active matrix electron beam (EB) exposure was confirmed.

Original languageEnglish
Title of host publicationPhotomask Japan 2019
Subtitle of host publicationXXVI Symposium on Photomask and Next-Generation Lithography Mask Technology
EditorsAkihiko Ando
PublisherSPIE
ISBN (Electronic)9781510630734
DOIs
Publication statusPublished - 2019 Jan 1
Event26th Symposium on Photomask and Next-Generation Lithography Mask Technology, Photomask Japan 2019 - Yokohama, Japan
Duration: 2019 Apr 162019 Apr 18

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11178
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference26th Symposium on Photomask and Next-Generation Lithography Mask Technology, Photomask Japan 2019
CountryJapan
CityYokohama
Period19/4/1619/4/18

Keywords

  • Electron beam
  • active matrix LSI
  • electron emitter array

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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