Development of high-throughput batch-type epitaxial reactor

Y. Kunii, Y. Inokuchi, J. Wang, K. Yamamoto, A. Moriya, Y. Hashiba, H. Kurokawa, J. Murota

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Si/SiGe selective epitaxial growth is becoming a critical process step for ULSI fabrication on 65nm and beyond technologies with need for elevated source-drain or strained Si channel to enhance device performance. This paper reviews recent efforts to improve batch-type epitaxial reactors for high-volume device fabrication and shows recent progress in low-temperature Si/SiGe selective epi process. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)841-847
Number of pages7
JournalECS Transactions
Issue number7
Publication statusPublished - 2006 Dec 1
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

ASJC Scopus subject areas

  • Engineering(all)


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