Si/SiGe selective epitaxial growth is becoming a critical process step for ULSI fabrication on 65nm and beyond technologies with need for elevated source-drain or strained Si channel to enhance device performance. This paper reviews recent efforts to improve batch-type epitaxial reactors for high-volume device fabrication and shows recent progress in low-temperature Si/SiGe selective epi process. copyright The Electrochemical Society.
|Number of pages||7|
|Publication status||Published - 2006 Dec 1|
|Event||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
ASJC Scopus subject areas