Development of high power press-pack IGBT and its applications

Yoshiyuki Uchida, Yasukazu Seki, Yoshikazu Takahashi, Masami Ichijoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability, compactness due to the both-sided cooling, rupture free feature, and so forth. This paper reviews the performance and structure of 2.5 kV and 4.5 kV press-pack IGBT's and their major applications.

Original languageEnglish
Title of host publication2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PublisherIEEE Computer Society
Pages125-129
Number of pages5
ISBN (Print)0780352351, 9780780352353
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes
Event2000 22nd International Conference on Microelectronics, MIEL 2000 - Nis, Serbia
Duration: 2000 May 142000 May 17

Publication series

Name2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume1

Other

Other2000 22nd International Conference on Microelectronics, MIEL 2000
CountrySerbia
CityNis
Period00/5/1400/5/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Engineering(all)

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