Development of half-metallic ultrathin Fe 3 O 4 films for spin-transport devices

Susumu Soeya, Jun Hayakawa, Hiromasa Takahashi, Kenchi Ito, Chisato Yamamoto, Ayumu Kida, Hidefumi Asano, Masaaki Matsui

Research output: Contribution to journalArticlepeer-review

182 Citations (Scopus)


We attempted to fabricate a high-quality Fe 3 O 4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 Å). X-ray diffractometry showed that our prepared Fe 3 O 4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438emu/cm 3 , ∼10000μcm, and ∼110K. These values were comparable to those of the Fe 3 O 4 bulk. Our experimental results suggested that a high-quality Fe 3 O 4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 Å).

Original languageEnglish
Pages (from-to)823-825
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2002 Feb 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Development of half-metallic ultrathin Fe <sub>3</sub> O <sub>4</sub> films for spin-transport devices'. Together they form a unique fingerprint.

Cite this