Development of half-metallic ultrathin Fe
                        3
                        O
                        4
                         films for spin-transport devices

Susumu Soeya; Jun Hayakawa; Hiromasa Takahashi; Kenchi Ito; Chisato Yamamoto; Ayumu Kida; Hidefumi Asano; Masaaki Matsui

doi:10.1063/1.1446995

Development of half-metallic ultrathin Fe ₃ O ₄ films for spin-transport devices

Susumu Soeya, Jun Hayakawa, Hiromasa Takahashi, Kenchi Ito, Chisato Yamamoto, Ayumu Kida, Hidefumi Asano, Masaaki Matsui

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

182 Citations (Scopus)

Abstract

We attempted to fabricate a high-quality Fe ₃ O ₄ film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 Å). X-ray diffractometry showed that our prepared Fe ₃ O ₄ film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438emu/cm ³ , ∼10000μcm, and ∼110K. These values were comparable to those of the Fe ₃ O ₄ bulk. Our experimental results suggested that a high-quality Fe ₃ O ₄ film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 Å).

Original language	English
Pages (from-to)	823-825
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	5
DOIs	https://doi.org/10.1063/1.1446995
Publication status	Published - 2002 Feb 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1446995

Fingerprint Dive into the research topics of 'Development of half-metallic ultrathin Fe <sub>3</sub> O <sub>4</sub> films for spin-transport devices'. Together they form a unique fingerprint.

Cite this

Soeya, S., Hayakawa, J., Takahashi, H., Ito, K., Yamamoto, C., Kida, A., Asano, H., & Matsui, M. (2002). Development of half-metallic ultrathin Fe ₃ O ₄ films for spin-transport devices Applied Physics Letters, 80(5), 823-825. https://doi.org/10.1063/1.1446995

Development of half-metallic ultrathin Fe ₃ O ₄ films for spin-transport devices . / Soeya, Susumu; Hayakawa, Jun; Takahashi, Hiromasa; Ito, Kenchi; Yamamoto, Chisato; Kida, Ayumu; Asano, Hidefumi; Matsui, Masaaki.

In: Applied Physics Letters, Vol. 80, No. 5, 04.02.2002, p. 823-825.

Research output: Contribution to journal › Article › peer-review

Soeya, S, Hayakawa, J, Takahashi, H, Ito, K, Yamamoto, C, Kida, A, Asano, H & Matsui, M 2002, ' Development of half-metallic ultrathin Fe ₃ O ₄ films for spin-transport devices ', Applied Physics Letters, vol. 80, no. 5, pp. 823-825. https://doi.org/10.1063/1.1446995

Soeya S, Hayakawa J, Takahashi H, Ito K, Yamamoto C, Kida A et al. Development of half-metallic ultrathin Fe ₃ O ₄ films for spin-transport devices Applied Physics Letters. 2002 Feb 4;80(5):823-825. https://doi.org/10.1063/1.1446995

Soeya, Susumu ; Hayakawa, Jun ; Takahashi, Hiromasa ; Ito, Kenchi ; Yamamoto, Chisato ; Kida, Ayumu ; Asano, Hidefumi ; Matsui, Masaaki. / Development of half-metallic ultrathin Fe ₃ O ₄ films for spin-transport devices In: Applied Physics Letters. 2002 ; Vol. 80, No. 5. pp. 823-825.

@article{6d60ba0164344affb3e3df1a4130aca0,

title = " Development of half-metallic ultrathin Fe 3 O 4 films for spin-transport devices ",

abstract = " We attempted to fabricate a high-quality Fe 3 O 4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 {\AA}). X-ray diffractometry showed that our prepared Fe 3 O 4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438emu/cm 3 , ∼10000μcm, and ∼110K. These values were comparable to those of the Fe 3 O 4 bulk. Our experimental results suggested that a high-quality Fe 3 O 4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 {\AA}).",

author = "Susumu Soeya and Jun Hayakawa and Hiromasa Takahashi and Kenchi Ito and Chisato Yamamoto and Ayumu Kida and Hidefumi Asano and Masaaki Matsui",

year = "2002",

month = feb,

day = "4",

doi = "10.1063/1.1446995",

language = "English",

volume = "80",

pages = "823--825",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Development of half-metallic ultrathin Fe 3 O 4 films for spin-transport devices

AU - Soeya, Susumu

AU - Hayakawa, Jun

AU - Takahashi, Hiromasa

AU - Ito, Kenchi

AU - Yamamoto, Chisato

AU - Kida, Ayumu

AU - Asano, Hidefumi

AU - Matsui, Masaaki

PY - 2002/2/4

Y1 - 2002/2/4

N2 - We attempted to fabricate a high-quality Fe 3 O 4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 Å). X-ray diffractometry showed that our prepared Fe 3 O 4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438emu/cm 3 , ∼10000μcm, and ∼110K. These values were comparable to those of the Fe 3 O 4 bulk. Our experimental results suggested that a high-quality Fe 3 O 4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 Å).

AB - We attempted to fabricate a high-quality Fe 3 O 4 film while satisfying both low-thermal preparation (≦573 K) and film thinness (≦500 Å). X-ray diffractometry showed that our prepared Fe 3 O 4 film was epitaxially grown onto a MgO (100) substrate. The saturation magnetization, resistivity, and Verwey point were, respectively, ∼438emu/cm 3 , ∼10000μcm, and ∼110K. These values were comparable to those of the Fe 3 O 4 bulk. Our experimental results suggested that a high-quality Fe 3 O 4 film could be obtained even under the crucial conditions of the deposition temperature being low (∼523 K) and the film being ultrathinned (∼100 Å).

UR - http://www.scopus.com/inward/record.url?scp=79956044723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956044723&partnerID=8YFLogxK

U2 - 10.1063/1.1446995

DO - 10.1063/1.1446995

M3 - Article

AN - SCOPUS:79956044723

VL - 80

SP - 823

EP - 825

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -