TY - JOUR
T1 - Development of gating foils to inhibit ion feedback using fpc production techniques
AU - Arai, D.
AU - Ikematsu, K.
AU - Sugiyama, A.
AU - Iwamura, M.
AU - Koto, A.
AU - Katsuki, K.
AU - Fujii, K.
AU - Matsuda, T.
N1 - Publisher Copyright:
© The Authors, published by EDP Sciences.
PY - 2018/2/21
Y1 - 2018/2/21
N2 - Positive ion feedback from a gas amplification device to the drift region of the Time Projection Chamber for the ILC can deteriorate the position resolution. In order to inhibit the feedback ions. MPGD-based gating foils having good electron transmission have been developed to be used instead of the conventional wire gate. The gating foil needs to control the electric field locally in opening or closing the gate. The gating foil with a GEM (gas electron multiplier)-like structure has larger holes and smaller thickness than standard GEMs for gas amplification. It is known that the foil transmits over 80 % of electrons and blocks ions almost completely. We have developed the gating foils using flexible printed circuit (FPC) production techniques including an improved single-mask process. In this paper, we report on the production technique of 335 μm pitch. 12.5 μm thick gating foil with 80 % transmittance of electrons in ILC conditions.
AB - Positive ion feedback from a gas amplification device to the drift region of the Time Projection Chamber for the ILC can deteriorate the position resolution. In order to inhibit the feedback ions. MPGD-based gating foils having good electron transmission have been developed to be used instead of the conventional wire gate. The gating foil needs to control the electric field locally in opening or closing the gate. The gating foil with a GEM (gas electron multiplier)-like structure has larger holes and smaller thickness than standard GEMs for gas amplification. It is known that the foil transmits over 80 % of electrons and blocks ions almost completely. We have developed the gating foils using flexible printed circuit (FPC) production techniques including an improved single-mask process. In this paper, we report on the production technique of 335 μm pitch. 12.5 μm thick gating foil with 80 % transmittance of electrons in ILC conditions.
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U2 - 10.1051/epjconf/201817402007
DO - 10.1051/epjconf/201817402007
M3 - Conference article
AN - SCOPUS:85043240344
VL - 174
JO - EPJ Web of Conferences
JF - EPJ Web of Conferences
SN - 2101-6275
M1 - 02007
T2 - 4th International Conference on MicroPattern Gaseous Detectors, MPGD 2015
Y2 - 12 October 2015 through 15 October 2015
ER -