Development of electrode materials for semiconductor devices

Masanori Murakami, Yasuo Koide, Miki Moriyama, Susumu Tsukimoto

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis. Our research efforts have been focused to develop, low resistance, refractory ohmic contact materials using the deposition and annealing techniques for n-GaAs, p-ZnSe, InP, p-SiC p-CdTe etc. It was found the growth of homo- or hetero-epitaxial intermediate semiconductor layers (ISL) was essential for low resistance contact formation. The importance of hetero-structural ISL was given taking an example of n-type ohmic contact for GaAs.

    Original languageEnglish
    Pages (from-to)1705-1714
    Number of pages10
    JournalMaterials Science Forum
    Volume475-479
    Issue numberIII
    DOIs
    Publication statusPublished - 2005 Jan 1
    EventPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
    Duration: 2004 Nov 22004 Nov 5

    Keywords

    • Compound semiconductor
    • Intermediate semiconductor layer
    • Ohmic contact
    • Regrowth

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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