Development of drain current model for oxide semiconductor thin film transistors

Hiroshi Tsuji, Yoshiki Nakajima, Toshihiro Yamamoto, Mitsuru Nakata, Yoshihide Fujisaki, Hideo Fujikake, Hiroto Sato, Tatsuya Takei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson equation. The developed drain current model includes both drift and diffusion components, and it can thus be applied to the subthreshold, linear, and saturation regions. Calculations using the model produce results that are in good agreement with the measured drain current characteristics of amorphous indium gallium zinc oxide TFTs over a wide range of gate and drain voltages. The presented model is expected to play an important role in the analysis of TFT characteristics and the design of TFT structures to realize large-sized, high quality sheet-type displays with oxide semiconductor TFT backplanes.

Original languageEnglish
Title of host publication2012 IEEE Industry Applications Society Annual Meeting, IAS 2012
DOIs
Publication statusPublished - 2012
Event2012 IEEE Industry Applications Society Annual Meeting, IAS 2012 - Las Vegas, NV, United States
Duration: 2012 Oct 72012 Oct 11

Publication series

NameConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
ISSN (Print)0197-2618

Other

Other2012 IEEE Industry Applications Society Annual Meeting, IAS 2012
CountryUnited States
CityLas Vegas, NV
Period12/10/712/10/11

Keywords

  • Displays
  • Semiconductor device modeling
  • Thin film transistors
  • Wide band gap semiconductors

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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