Development of double-side SiC PECVD system for MEMS

Yasuhisa Suzuki, Shuji Tanaka, Yohei Hatakeyama, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This paper reports the development of a new double-side plasma-enhanced plasma chemical vapor deposition (PECVD) system for amorphous SiC. The PECVD system has cathode-coupling and hot wall type configuration. A wafer, which works as a cathode, is supported at the center of a quartz tube, and carbon anodes are placed at both sides of the wafer. Using tetramethylsilane (Si(CH3)4) mixed with H2 and Ar, amorphous SiC was deposited on both sides of the wafer simultaneously, and little wafer bending was observed even if the film has a compressive stress of several hundred MPa. Thus, the developed double-side PECVD system is useful to minimize wafer bending, which is often a problem for devices and fabrication processes. The fundamental properties (e.g. stress and Si/C ratio) of deposited films were investigated under different deposition conditions (e.g. gas flow rates and self-bias voltage).

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalIEEJ Transactions on Sensors and Micromachines
Volume132
Issue number5
DOIs
Publication statusPublished - 2012

Keywords

  • Double-side deposition
  • Film stress
  • MEMS
  • PECVD
  • Silicon carbide
  • Wafer bending

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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