TY - JOUR
T1 - Development of ballistic hot electron emitter and its applications to parallel processing
T2 - Active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions
AU - Koshida, Nobuyoshi
AU - Kojima, Akira
AU - Ikegami, Naokatsu
AU - Suda, Ryutaro
AU - Yagi, Mamiko
AU - Shirakashi, Junichi
AU - Miyaguchi, Hiroshi
AU - Muroyama, Masanori
AU - Yoshida, Shinya
AU - Totsu, Kentaro
AU - Esashi, Masayoshi
N1 - Publisher Copyright:
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE).
PY - 2015/7/1
Y1 - 2015/7/1
N2 - Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, an alternative lithographic technology is presented based on two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each emitting area: 10×10 μm2) are fabricated on a silicon substrate by a conventional planar process, and then every emitter is bonded with the integrated driver using through-silicon-via interconnect technology. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films.
AB - Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, an alternative lithographic technology is presented based on two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each emitting area: 10×10 μm2) are fabricated on a silicon substrate by a conventional planar process, and then every emitter is bonded with the integrated driver using through-silicon-via interconnect technology. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films.
KW - active-matrix drive
KW - ballistic hot electron
KW - direct write system
KW - mask-less parallel exposure
KW - nanocrystalline Si
KW - planar electron emitter
KW - printing
KW - thin-film deposition
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U2 - 10.1117/1.JMM.14.3.031215
DO - 10.1117/1.JMM.14.3.031215
M3 - Article
AN - SCOPUS:84942627413
VL - 14
JO - Journal of Micro/ Nanolithography, MEMS, and MOEMS
JF - Journal of Micro/ Nanolithography, MEMS, and MOEMS
SN - 1932-5150
IS - 3
M1 - 031215
ER -