Development of annealing process for solution-derived high performance InGaZnO thin-film transistors

Kwan Soo Kim, Se Won Lee, Se Man Oh, Won Ju Cho

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Abstract The influences of the annealing process on solution-derived InGaZnO thin-film transistors (TFTs) were investigated. Operation characteristics of IGZO TFTs were obtained from high temperature processes: rapid thermal annealing (RTA) at 600 C and conventional thermal annealing (CTA) at 500 C. It is found that the RTA increases the on-current and off-current of TFTs. The CTA decreases off-current and improves the interfacial property. Meanwhile, a two-step annealing process, comprising RTA and CTA, increases on-current and decreases off-current and is considered as the optimal annealing procedure. Another two-step annealing process, comprising CTA and RTA, increases on-current but increases off-current, simultaneously.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number12
Publication statusPublished - 2013
Externally publishedYes


  • CTA
  • IGZO
  • RTA
  • Solution process

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Development of annealing process for solution-derived high performance InGaZnO thin-film transistors'. Together they form a unique fingerprint.

Cite this