Development of an automated vapor/liquid hybrid deposition system to form high-k dielectrics

Daisuke Hojo; Yi Xuan; Tetsuji Yasuda

doi:10.1002/cvde.200506438

Development of an automated vapor/liquid hybrid deposition system to form high-k dielectrics

Daisuke Hojo, Yi Xuan, Tetsuji Yasuda

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Vapor/liquid hybrid deposition (VALID) is a modified atomic layer deposition (ALD) method that combines adsorption of metal precursors from the vapor phase with their hydrolysis from the liquid phase. This paper is a report of the development of an automated VALID apparatus that performs the adsorption/hydrolysis processes with a reasonable throughput. HfO₂ films have been successfully produced with this automated system using Hf(O′C₄H₉)₄ [hafnium tetra-fert-butoxide (HTB)]as the precursor. A brief discussion is given on the contribution of multilayer adsorption of HTB to the observed deposition rates.

Original language	English
Pages (from-to)	214-219
Number of pages	6
Journal	Chemical Vapor Deposition
Volume	12
Issue number	4
DOIs	https://doi.org/10.1002/cvde.200506438
Publication status	Published - 2006 Apr 1

Keywords

Adsorption
Atomic layer deposition
High-k dielectrics
Hydrolysis
Vapor/liquid hybrids

ASJC Scopus subject areas

Electrochemistry
Process Chemistry and Technology
Surfaces, Coatings and Films
Surfaces and Interfaces
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

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10.1002/cvde.200506438

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@article{4980ad82f2b64c2aba32d83b538774ed,

title = "Development of an automated vapor/liquid hybrid deposition system to form high-k dielectrics",

abstract = "Vapor/liquid hybrid deposition (VALID) is a modified atomic layer deposition (ALD) method that combines adsorption of metal precursors from the vapor phase with their hydrolysis from the liquid phase. This paper is a report of the development of an automated VALID apparatus that performs the adsorption/hydrolysis processes with a reasonable throughput. HfO2 films have been successfully produced with this automated system using Hf(O′C4H9)4 [hafnium tetra-fert-butoxide (HTB)]as the precursor. A brief discussion is given on the contribution of multilayer adsorption of HTB to the observed deposition rates.",

keywords = "Adsorption, Atomic layer deposition, High-k dielectrics, Hydrolysis, Vapor/liquid hybrids",

author = "Daisuke Hojo and Yi Xuan and Tetsuji Yasuda",

year = "2006",

month = apr,

day = "1",

doi = "10.1002/cvde.200506438",

language = "English",

volume = "12",

pages = "214--219",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Development of an automated vapor/liquid hybrid deposition system to form high-k dielectrics

AU - Hojo, Daisuke

AU - Xuan, Yi

AU - Yasuda, Tetsuji

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Vapor/liquid hybrid deposition (VALID) is a modified atomic layer deposition (ALD) method that combines adsorption of metal precursors from the vapor phase with their hydrolysis from the liquid phase. This paper is a report of the development of an automated VALID apparatus that performs the adsorption/hydrolysis processes with a reasonable throughput. HfO2 films have been successfully produced with this automated system using Hf(O′C4H9)4 [hafnium tetra-fert-butoxide (HTB)]as the precursor. A brief discussion is given on the contribution of multilayer adsorption of HTB to the observed deposition rates.

AB - Vapor/liquid hybrid deposition (VALID) is a modified atomic layer deposition (ALD) method that combines adsorption of metal precursors from the vapor phase with their hydrolysis from the liquid phase. This paper is a report of the development of an automated VALID apparatus that performs the adsorption/hydrolysis processes with a reasonable throughput. HfO2 films have been successfully produced with this automated system using Hf(O′C4H9)4 [hafnium tetra-fert-butoxide (HTB)]as the precursor. A brief discussion is given on the contribution of multilayer adsorption of HTB to the observed deposition rates.

KW - Adsorption

KW - Atomic layer deposition

KW - High-k dielectrics

KW - Hydrolysis

KW - Vapor/liquid hybrids

UR - http://www.scopus.com/inward/record.url?scp=33845563928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845563928&partnerID=8YFLogxK

U2 - 10.1002/cvde.200506438

DO - 10.1002/cvde.200506438

M3 - Article

AN - SCOPUS:33845563928

VL - 12

SP - 214

EP - 219

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

SN - 0948-1907

IS - 4

ER -

Development of an automated vapor/liquid hybrid deposition system to form high-k dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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