Development of Ag3Sn intermetallic compound joint for power semiconductor devices

Toshihide Takahashi, Shuichi Komatsu, Tatsuoki Kono

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Pb-based solders are used as high temperature solders in power semiconductor devices. Although use of Pb is globally restricted, alternative materials are inadequate to replace Pb-based solder. This study aims to replace Pb-based solder with an intermetallic compound (IMC). Samples were produced to join a Si chip with evaporated Ag and Sn films onto a Ag-plated Cu substrate at 523 K for 10 s. As a result, the evaporated films were completely transformed into a Ag3Sn IMC. The IMC joint showed higher strength until 543 K and good heat-aging resistance at 423 K. Therefore, this joint would be promising in replacing Pb-based solders.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2009 Aug 28
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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