Development of a nanostructural microwave probe based on GaAs

Y. Ju, T. Kobayashi, H. Soyama

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

In order to develop a new structural microwave probe, we studied the fabrication of an AFM probe on a GaAs wafer. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe where a tip 7 μm high with a 2.0 aspect ratio was formed and the dimensions of the cantilever were 250 × 30 × 15 μm. The open structure of the waveguide at the tip of the probe was obtained by FIB fabrication. An AFM image and profile analysis for a standard sample, obtained by the fabricated GaAs microwave probe and a commercial Si AFM probe, indicate that the fabricated probe has a similar capability for measurement of material topography as compared to the commercial probe.

Original languageEnglish
Pages (from-to)1021-1025
Number of pages5
JournalMicrosystem Technologies
Volume14
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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