Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere

K. Suzuki; Y. Ishihara; K. Sakoda; Yasuyuki Shirai; Masaki Hirayama; Akinobu Teramoto; T. Ohmi; T. Watanabe

doi:10.1109/ISSM.2007.4446796

Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)₂/CaO under a decompression atmosphere

K. Suzuki, Y. Ishihara, K. Sakoda, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, T. Ohmi, T. Watanabe

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have developed a PFC abatement system utilizing a 2MHz ICP plasma source and two columns filled with Ca(OH)₂/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2MHz ICP plasma decomposes the PFCs. The Ca(OH)₂/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F₂ equivalent removal efficiency and CO₂ equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO₂ equivalent emissions were caused by power consumption.

Original language	English
Title of host publication	2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings
Pages	171-174
Number of pages	4
DOIs	https://doi.org/10.1109/ISSM.2007.4446796
Publication status	Published - 2007 Dec 1
Event	16th Annual 2007 International Symposium on Semiconductor Manufacturing, ISSM - Santa Clara, CA, United States Duration: 2007 Oct 15 → 2007 Oct 17

Publication series

Name	IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)	1523-553X

Other

Other	16th Annual 2007 International Symposium on Semiconductor Manufacturing, ISSM
Country	United States
City	Santa Clara, CA
Period	07/10/15 → 07/10/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/ISSM.2007.4446796

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Suzuki, K., Ishihara, Y., Sakoda, K., Shirai, Y., Hirayama, M., Teramoto, A., Ohmi, T., & Watanabe, T. (2007). Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)₂/CaO under a decompression atmosphere. In 2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings (pp. 171-174). [4446796] (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). https://doi.org/10.1109/ISSM.2007.4446796

Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)₂/CaO under a decompression atmosphere. / Suzuki, K.; Ishihara, Y.; Sakoda, K.; Shirai, Yasuyuki ; Hirayama, Masaki; Teramoto, Akinobu; Ohmi, T.; Watanabe, T.

2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings. 2007. p. 171-174 4446796 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suzuki, K, Ishihara, Y, Sakoda, K, Shirai, Y , Hirayama, M, Teramoto, A, Ohmi, T & Watanabe, T 2007, Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)₂/CaO under a decompression atmosphere. in 2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings., 4446796, IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, pp. 171-174, 16th Annual 2007 International Symposium on Semiconductor Manufacturing, ISSM, Santa Clara, CA, United States, 07/10/15. https://doi.org/10.1109/ISSM.2007.4446796

Suzuki K, Ishihara Y, Sakoda K, Shirai Y , Hirayama M, Teramoto A et al. Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)₂/CaO under a decompression atmosphere. In 2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings. 2007. p. 171-174. 4446796. (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). https://doi.org/10.1109/ISSM.2007.4446796

Suzuki, K. ; Ishihara, Y. ; Sakoda, K. ; Shirai, Yasuyuki ; Hirayama, Masaki ; Teramoto, Akinobu ; Ohmi, T. ; Watanabe, T. / Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)₂/CaO under a decompression atmosphere. 2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings. 2007. pp. 171-174 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).

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abstract = "We have developed a PFC abatement system utilizing a 2MHz ICP plasma source and two columns filled with Ca(OH)2/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2MHz ICP plasma decomposes the PFCs. The Ca(OH)2/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F2 equivalent removal efficiency and CO2 equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO2 equivalent emissions were caused by power consumption.",

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AU - Shirai, Yasuyuki

AU - Hirayama, Masaki

AU - Teramoto, Akinobu

AU - Ohmi, T.

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AB - We have developed a PFC abatement system utilizing a 2MHz ICP plasma source and two columns filled with Ca(OH)2/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2MHz ICP plasma decomposes the PFCs. The Ca(OH)2/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F2 equivalent removal efficiency and CO2 equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO2 equivalent emissions were caused by power consumption.

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