TY - GEN
T1 - Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere
AU - Suzuki, K.
AU - Ishihara, Y.
AU - Sakoda, K.
AU - Shirai, Y.
AU - Hirayama, M.
AU - Teramoto, A.
AU - Ohmi, T.
AU - Watanabe, T.
PY - 2007
Y1 - 2007
N2 - We have developed a PFC abatement system utilizing a 2MHz ICP plasma source and two columns filled with Ca(OH)2/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2MHz ICP plasma decomposes the PFCs. The Ca(OH)2/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F2 equivalent removal efficiency and CO2 equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO2 equivalent emissions were caused by power consumption.
AB - We have developed a PFC abatement system utilizing a 2MHz ICP plasma source and two columns filled with Ca(OH)2/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2MHz ICP plasma decomposes the PFCs. The Ca(OH)2/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F2 equivalent removal efficiency and CO2 equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO2 equivalent emissions were caused by power consumption.
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U2 - 10.1109/ISSM.2007.4446796
DO - 10.1109/ISSM.2007.4446796
M3 - Conference contribution
AN - SCOPUS:50249123110
SN - 1424411424
SN - 9781424411429
T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
SP - 171
EP - 174
BT - 2007 International Symposium on Semiconductor Manufacturing, ISSM - Conference Proceedings
T2 - 16th Annual 2007 International Symposium on Semiconductor Manufacturing, ISSM
Y2 - 15 October 2007 through 17 October 2007
ER -