Development of 100-nm-thick self-sensing nanocantilevers and characterization of the temperature dependence of the piezoresistivity and conductivity

Yonggang Jiang, Takahito Ono, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Piezoresistive nanocantilevers are proposed for high-sensitive sensing applications such as thermal detectors, mass sensors, and magnetic resonance force microscopy. This paper describes the development of 100-nm-thick piezoresistive nanocantilevers and characterization of the temperature dependence of the piezoresisitivity and conductivity. The pieozresistive nanocantilevers are fabricated using spin-on diffusion, electron beam lithography, deep reactive ion etching, and XeF2 vapor-phase etching techniques. A maximum longitudinal piezoresistance coefficient is obtained at 80-90 K. The shallo piezoresistor also exhibits a "quantum" metal-insulator transition phenomenon at a temperature as high as 40 K for the first time, which may prohibit its application at lower temperatures.

Original languageEnglish
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages1309-1312
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 11
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: 2009 Jun 212009 Jun 25

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
CountryUnited States
CityDenver, CO
Period09/6/2109/6/25

Keywords

  • Boron diffusion
  • Nanocantilever
  • Piezoresistivity

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Jiang, Y., Ono, T., & Esashi, M. (2009). Development of 100-nm-thick self-sensing nanocantilevers and characterization of the temperature dependence of the piezoresistivity and conductivity. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 1309-1312). [5285871] (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285871