Five apatite crystal scintillators, which have chemical compositions of Ce 0.5%: Gd9.33(SiO4)6O2, Ce 0.5%:(Gd8Sr2)(SiO4)6O2, Ce 5%:(Gd8Sr2)(SiO4)6O2, Yb 0.5%:(Gd8Sr2)(SiO4)6O2 and Yb 3%:(Gd8Sr2)(SiO4)6O 2 were grown by the micro-pulling down method. After cut and polishing processes, optical and radiation properties were evaluated. In a transmittance measurement, Ce doped crystals showed an absorption feature at approximately 300 nm and Yb doped ones 220 nm, respectively. When Ce-doped ones were excited by 340 nm photons, the emission peak appeared at approximately 400 and 440 nm, due to Ce3+ 5d-4f transitions. In Yb-doped series, 270 nm excitation caused emission peaking around 300 nm. The photoluminescence decay time kinetics of Ce-doped series were investigated. The Ce 0.5% doped (Gd 8Sr2)(SiO4)6O2 showed about 23 ns decay constants, and the 5% doped one showed 14 ns. When coupled with Si-APD and irradiated by 241Am α-ray, Ce doped scintillators showed 300-500 photons/5.5 MeV α as a light yield.
- Radiation detectors
- Scintillation detectors
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering