TY - JOUR
T1 - Development and evaluations of apatite crystal scintillators
AU - Yanagida, Takayuki
AU - Fujimoto, Yutaka
AU - Ohgi, Yoshihumi
AU - Yokota, Yuui
AU - Yoshikawa, Akira
AU - Kagi, Hiroyuki
AU - Sugiyama, Kazumasa
AU - Kamada, Kei
N1 - Funding Information:
Manuscript received June 19, 2009; revised September 24, 2009; accepted February 04, 2010. Date of current version June 16, 2010. This work was supported in part by a Grant in Aid for Young Scientists (B), 15686001, 2009 from the Ministry of Education, Culture, Sports, Science, and Technology of the Japanese government (MEXT), in part by the Yazaki Memorial Foundation for Science and Technology, in part by the Japan Science Society, in part by the Sumitomo Foundation, and in part by the Iketani Science and Technology Foundation.
PY - 2010/6
Y1 - 2010/6
N2 - Five apatite crystal scintillators, which have chemical compositions of Ce 0.5%: Gd9.33(SiO4)6O2, Ce 0.5%:(Gd8Sr2)(SiO4)6O2, Ce 5%:(Gd8Sr2)(SiO4)6O2, Yb 0.5%:(Gd8Sr2)(SiO4)6O2 and Yb 3%:(Gd8Sr2)(SiO4)6O 2 were grown by the micro-pulling down method. After cut and polishing processes, optical and radiation properties were evaluated. In a transmittance measurement, Ce doped crystals showed an absorption feature at approximately 300 nm and Yb doped ones 220 nm, respectively. When Ce-doped ones were excited by 340 nm photons, the emission peak appeared at approximately 400 and 440 nm, due to Ce3+ 5d-4f transitions. In Yb-doped series, 270 nm excitation caused emission peaking around 300 nm. The photoluminescence decay time kinetics of Ce-doped series were investigated. The Ce 0.5% doped (Gd 8Sr2)(SiO4)6O2 showed about 23 ns decay constants, and the 5% doped one showed 14 ns. When coupled with Si-APD and irradiated by 241Am α-ray, Ce doped scintillators showed 300-500 photons/5.5 MeV α as a light yield.
AB - Five apatite crystal scintillators, which have chemical compositions of Ce 0.5%: Gd9.33(SiO4)6O2, Ce 0.5%:(Gd8Sr2)(SiO4)6O2, Ce 5%:(Gd8Sr2)(SiO4)6O2, Yb 0.5%:(Gd8Sr2)(SiO4)6O2 and Yb 3%:(Gd8Sr2)(SiO4)6O 2 were grown by the micro-pulling down method. After cut and polishing processes, optical and radiation properties were evaluated. In a transmittance measurement, Ce doped crystals showed an absorption feature at approximately 300 nm and Yb doped ones 220 nm, respectively. When Ce-doped ones were excited by 340 nm photons, the emission peak appeared at approximately 400 and 440 nm, due to Ce3+ 5d-4f transitions. In Yb-doped series, 270 nm excitation caused emission peaking around 300 nm. The photoluminescence decay time kinetics of Ce-doped series were investigated. The Ce 0.5% doped (Gd 8Sr2)(SiO4)6O2 showed about 23 ns decay constants, and the 5% doped one showed 14 ns. When coupled with Si-APD and irradiated by 241Am α-ray, Ce doped scintillators showed 300-500 photons/5.5 MeV α as a light yield.
KW - Cerium
KW - Radiation detectors
KW - Scintillation detectors
KW - Ytterbium
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U2 - 10.1109/TNS.2010.2042966
DO - 10.1109/TNS.2010.2042966
M3 - Article
AN - SCOPUS:77953941074
VL - 57
SP - 1308
EP - 1311
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 3 PART 2
M1 - 5485085
ER -