Development and evaluation of AuSi eutectic wafer bonding

Ikusei Rin, M. Baum, M. Haubold, J. Frömel, M. Wiemer, T. Gessner, M. Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

In this paper, wafer-to-wafer AuSi eutectic bonding was investigated and evaluated with various sets of experimental parameters. Single crystalline Si and amorphous Si were bonded with different dimension Au layers and observed by optical measurements. Material composition, adhesion layer, electrical insulation, bonding parameters, and surface pre-treatments were discussed and have improved bonding performance. Bond strength determined by micro-chevron-test and shear test was evaluated as well as hermeticity. High bond yield was achieved with 4 inch and 6 inch wafer stacks.

Original languageEnglish
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages244-247
Number of pages4
DOIs
Publication statusPublished - 2009
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: 2009 Jun 212009 Jun 25

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
CountryUnited States
CityDenver, CO
Period09/6/2109/6/25

Keywords

  • AuSi eutectic
  • Integration technology
  • Wafer level bonding

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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