The true potential of semiconductors, the basic material in transistors, has been realized by adding dopants to tailor their electronic properties; this has conventionally been achieved through a doping process. Doping control is an essential requirement, particularly when the device scale is in the deep sub-30 nm regime. In the immediate future, scaled-down transistors will contain only a small number of dopants in the channel, where a random distribution of dopants will cause significant variations in transistor performances.
|Title of host publication||Single-Atom Nanoelectronics|
|Publisher||Pan Stanford Publishing Pte. Ltd.|
|Number of pages||30|
|Publication status||Published - 2013 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)