Abstract
A method to determine the escape depth considering the thickness distribution in the film is proposed. The escape depth can be determined from the measurements on one specimen without determining the thickness distribution in the film, if the thickness varies from position to position on the substrate surface almost continuously and the sputter etching rate used for the measurements can be determined independently. The escape depth of X-ray excited photoelectrons in platinum is 9. 0 A for an electron energy of nearly 1168 eV and that in silicon dioxide is 12. 0 A for an electron energy of nearly 1181 eV.
| Original language | English |
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| Title of host publication | Unknown Host Publication Title |
| Publisher | Int Union for Vac Sci, Tech and Appl |
| Pages | 2259-2262 |
| Number of pages | 4 |
| Volume | 3 |
| Publication status | Published - 1977 |
| Event | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria Duration: 1977 Sep 12 → 1977 Sep 16 |
Other
| Other | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl |
|---|---|
| City | Vienna, Austria |
| Period | 77/9/12 → 77/9/16 |
ASJC Scopus subject areas
- Engineering(all)