DETERMINATION OF THE ESCAPE DEPTH OF X-RAY EXCITED PHOTOELECTRONS IN SOLID.

Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    2 Citations (Scopus)

    Abstract

    A method to determine the escape depth considering the thickness distribution in the film is proposed. The escape depth can be determined from the measurements on one specimen without determining the thickness distribution in the film, if the thickness varies from position to position on the substrate surface almost continuously and the sputter etching rate used for the measurements can be determined independently. The escape depth of X-ray excited photoelectrons in platinum is 9. 0 A for an electron energy of nearly 1168 eV and that in silicon dioxide is 12. 0 A for an electron energy of nearly 1181 eV.

    Original languageEnglish
    Title of host publicationUnknown Host Publication Title
    PublisherInt Union for Vac Sci, Tech and Appl
    Pages2259-2262
    Number of pages4
    Volume3
    Publication statusPublished - 1977
    EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
    Duration: 1977 Sep 121977 Sep 16

    Other

    OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
    CityVienna, Austria
    Period77/9/1277/9/16

    ASJC Scopus subject areas

    • Engineering(all)

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