Determination of Silicon self-interstitial diffusivity using isotopically pure30Silicon multi-layer

Shingo Seto, Tomohisa Sakaguchi, Yukio Nakabayashi, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Si self-diffusion under oxygen ambient has been studied using multi-layer structures consisting of alternative layers with isotopically enriched 30Si and natural Si in order to determine the diffusivities of Si self-interstitials. Spreading of 30Si spikes of each layer due to the diffusion of Si self-interstitials generated at the surface was measured with SIMS analysis. The diffusivity of Si self-interstitials, DI, is obtained from the fitting with experimental results. In the temperature range between 820 and 920°C, DI and thermal equilibrium concentration of Si self-interstitials, CIi, are described by the Arrhenius equations, D I = 3.48 × 104 exp(-3.82eV/KT)(cm2/s) and CIi = 9.62 × 1018 exp(-0.475 eV/KT) (cm -3), respectively.

Original languageEnglish
Pages (from-to)334-338
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue numberSPEC. ISS.
Publication statusPublished - 2004


  • Isotopically enriched
  • Self-diffusion
  • Thermal equilibrium

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Determination of Silicon self-interstitial diffusivity using isotopically pure30Silicon multi-layer'. Together they form a unique fingerprint.

Cite this