Determination of electron escape depth in ultrathin silicon oxide

H. Nohira, H. Okamoto, K. Azuma, Y. Nakata, E. Ikenaga, K. Kobayashi, Y. Takata, S. Shin, T. Hattori

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11 Citations (Scopus)


Using the high-brilliance synchrotron radiation at SPring-8, we determined the electron escape depths in approximately 1-nm -thick low-temperature oxide layers, which were formed on Si(100) at 300 °C using three kinds of atomic oxygen and that in approximately 1-nm -thick thermally grown oxide layer formed in 1 Torr dry oxygen at 900 °C by measuring angle-resolved Si 2p photoelectron spectra at the photon energy of 1050 eV. The results indicated that the electron escape depths in the three kinds of low-temperature oxide layers were 18%-24% smaller than that in the thermally grown oxide layer. Furthermore, the electron escape depth in the thermally grown oxide layer, whose thickness was close to that of the structural transition layer, was 7% smaller than that in bulk Si O2.

Original languageEnglish
Article number081911
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2005 Feb 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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