TY - GEN
T1 - Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes
AU - Sakai, Shigeta
AU - Kojima, Kazunobu
AU - Chichibu, Shigefusa F.
AU - Yamaguchi, Atsushi A.
N1 - Funding Information:
In this work, we have determined the deformation potentials in the InGaN material, and we have performed the theoretical prediction of optical gain characteristics in semipolar and nonpolar InGaN QWs using the obtained parameters. It is found that semipolar substrate orientation of T a deg is very promising for low-cost and high-performance green LD with cleaved-facet cavity mirrors. This work was supported by JSPS KAKENHI (JP17H05341, JP16H06427, JP17H04809, JP17J11367). REFERENCES [1] T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 39, 413 (2000). [2] A. A. Yamaguchi and K. Kojima, Appl. Phys. Lett. 98, 101905 (2011). [3] H. Tamaki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka, Appl. Phys. Lett. 99, 061912 (2011).
PY - 2018/10/30
Y1 - 2018/10/30
N2 - Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.
AB - Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.
KW - Deformation potentials
KW - Green laser diodes
KW - InGaN quantum wells
KW - Optical gain
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U2 - 10.1109/ISLC.2018.8516203
DO - 10.1109/ISLC.2018.8516203
M3 - Conference contribution
AN - SCOPUS:85057391642
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 135
EP - 136
BT - 26th International Semiconductor Laser Conference, ISLC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Semiconductor Laser Conference, ISLC 2018
Y2 - 16 September 2018 through 19 September 2018
ER -