Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes

Shigeta Sakai, Kazunobu Kojima, Shigefusa F. Chichibu, Atsushi A. Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages135-136
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 2018 Oct 30
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 2018 Sep 162018 Sep 19

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period18/9/1618/9/19

Keywords

  • Deformation potentials
  • Green laser diodes
  • InGaN quantum wells
  • Optical gain

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Sakai, S., Kojima, K., Chichibu, S. F., & Yamaguchi, A. A. (2018). Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 135-136). [8516203] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516203