Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes

Shigeta Sakai; Kazunobu Kojima; Shigefusa F. Chichibu; Atsushi A. Yamaguchi

doi:10.1109/ISLC.2018.8516203

Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes

Shigeta Sakai, Kazunobu Kojima, Shigefusa F. Chichibu, Atsushi A. Yamaguchi

Division of Measurements

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	135-136
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516203
Publication status	Published - 2018 Oct 30
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 2018 Sep 16 → 2018 Sep 19

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country	United States
City	Santa Fe
Period	18/9/16 → 18/9/19

Keywords

Deformation potentials
Green laser diodes
InGaN quantum wells
Optical gain

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2018.8516203

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Sakai, S., Kojima, K., Chichibu, S. F., & Yamaguchi, A. A. (2018). Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 135-136). [8516203] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516203

Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes. / Sakai, Shigeta; Kojima, Kazunobu ; Chichibu, Shigefusa F.; Yamaguchi, Atsushi A.

26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 135-136 8516203 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sakai, S, Kojima, K , Chichibu, SF & Yamaguchi, AA 2018, Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516203, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 135-136, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516203

Sakai S, Kojima K , Chichibu SF, Yamaguchi AA. Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 135-136. 8516203. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2018.8516203

Sakai, Shigeta ; Kojima, Kazunobu ; Chichibu, Shigefusa F. ; Yamaguchi, Atsushi A. / Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 135-136 (Conference Digest - IEEE International Semiconductor Laser Conference).

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title = "Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes",

abstract = "Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.",

keywords = "Deformation potentials, Green laser diodes, InGaN quantum wells, Optical gain",

author = "Shigeta Sakai and Kazunobu Kojima and Chichibu, {Shigefusa F.} and Yamaguchi, {Atsushi A.}",

note = "Funding Information: In this work, we have determined the deformation potentials in the InGaN material, and we have performed the theoretical prediction of optical gain characteristics in semipolar and nonpolar InGaN QWs using the obtained parameters. It is found that semipolar substrate orientation of T a deg is very promising for low-cost and high-performance green LD with cleaved-facet cavity mirrors. This work was supported by JSPS KAKENHI (JP17H05341, JP16H06427, JP17H04809, JP17J11367). REFERENCES [1] T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 39, 413 (2000). [2] A. A. Yamaguchi and K. Kojima, Appl. Phys. Lett. 98, 101905 (2011). [3] H. Tamaki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka, Appl. Phys. Lett. 99, 061912 (2011).; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

year = "2018",

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doi = "10.1109/ISLC.2018.8516203",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

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T1 - Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes

AU - Sakai, Shigeta

AU - Kojima, Kazunobu

AU - Chichibu, Shigefusa F.

AU - Yamaguchi, Atsushi A.

N1 - Funding Information: In this work, we have determined the deformation potentials in the InGaN material, and we have performed the theoretical prediction of optical gain characteristics in semipolar and nonpolar InGaN QWs using the obtained parameters. It is found that semipolar substrate orientation of T a deg is very promising for low-cost and high-performance green LD with cleaved-facet cavity mirrors. This work was supported by JSPS KAKENHI (JP17H05341, JP16H06427, JP17H04809, JP17J11367). REFERENCES [1] T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 39, 413 (2000). [2] A. A. Yamaguchi and K. Kojima, Appl. Phys. Lett. 98, 101905 (2011). [3] H. Tamaki, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka, Appl. Phys. Lett. 99, 061912 (2011).

PY - 2018/10/30

Y1 - 2018/10/30

N2 - Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.

AB - Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performance green-emitting laser diodes could be realized on low-angle semipolar GaN substrates.

KW - Deformation potentials

KW - Green laser diodes

KW - InGaN quantum wells

KW - Optical gain

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