TY - JOUR
T1 - Determination of carrier type doped from metal contacts to graphene by channel-length-dependent shift of charge neutrality points
AU - Nouchi, Ryo
AU - Saito, Tatsuya
AU - Tanigaki, Katsumi
PY - 2011/3
Y1 - 2011/3
N2 - A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole) doping by shortening of the interelectrode spacing. The shift of the Dirac point is accompanied by an enhancement of the electron-hole conductivity asymmetry. Experimentally determined carrier types may be explained in terms of the metal work functions modified by interactions with graphene.
AB - A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole) doping by shortening of the interelectrode spacing. The shift of the Dirac point is accompanied by an enhancement of the electron-hole conductivity asymmetry. Experimentally determined carrier types may be explained in terms of the metal work functions modified by interactions with graphene.
UR - http://www.scopus.com/inward/record.url?scp=79952517436&partnerID=8YFLogxK
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U2 - 10.1143/APEX.4.035101
DO - 10.1143/APEX.4.035101
M3 - Article
AN - SCOPUS:79952517436
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
M1 - 035101
ER -