TY - JOUR
T1 - Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si xGe 1-x (0.93 < x < 0.96) single crystals
AU - Yonenaga, I.
N1 - Funding Information:
Acknowledgement This work was partially supported by JSPS Grants-in Aid (No. 1345001and No. 16039202).
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2008/4
Y1 - 2008/4
N2 - Undoped and impurity-doped single crystals of Si x Ge 1-x with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin's curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1.
AB - Undoped and impurity-doped single crystals of Si x Ge 1-x with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin's curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1.
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U2 - 10.1007/s10854-007-9338-x
DO - 10.1007/s10854-007-9338-x
M3 - Article
AN - SCOPUS:39149086147
VL - 19
SP - 315
EP - 318
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 4
ER -