Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si xGe 1-x (0.93 < x < 0.96) single crystals

I. Yonenaga

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1 Citation (Scopus)

Abstract

Undoped and impurity-doped single crystals of Si x Ge 1-x with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin's curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1.

Original languageEnglish
Pages (from-to)315-318
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume19
Issue number4
DOIs
Publication statusPublished - 2008 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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