Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation

N. Kumagai, Takashi Hanada, T. Yao, T. Yasuda

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have performed in situ and ex situ measurements of reflectance difference (RD) spectra for Cl-doped n-type ZnSe grown by molecular beam epitaxy. The linear electro-optic (LEO) effect (or Pockels effect) in the depletion layer induces characteristic RD features near the E 1 and E 11 transition energy. The intensity of these features is correlated with the carrier concentration determined from capacitance-voltage measurements. A quantitative model is presented to explain the observed dependence of the LEO signal on the carrier concentration. This model quantitatively considers the effect of the finite surface state density. A good fit with the experimental results was obtained by assuming the surface state densities of 3.8×10 13 and 2.6×10 13 cm -2eV -1, respectively, for in situ measurement of a Se-terminated surface at 300°C and for ex situ measurement of an oxide-covered surface at room temperature.

Original languageEnglish
Pages (from-to)139-143
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number1
DOIs
Publication statusPublished - 2002 Jul 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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