Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

M. Kitamura, M. Kobayashi, E. Sakai, R. Takahashi, M. Lippmaa, K. Horiba, H. Fujioka, H. Kumigashira

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

Original languageEnglish
Article number061605
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2015 Feb 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Determination of band diagram for a p-n junction between Mott insulator LaMnO<sub>3</sub> and band insulator Nb:SrTiO<sub>3</sub>'. Together they form a unique fingerprint.

Cite this