Abstract
The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (Tg < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP (0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.
Original language | English |
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Pages (from-to) | 267-274 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 243 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2002 Aug |
Keywords
- A1. Crystal morphology
- A1. Growth models
- A1. Surface structure
- A3. Liquid phase exitaxy
- B1. Phosphides
- B2. Semiconducting Indium compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry