Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP

Yutaka Oyama; Toshio Kochiya; Ken Suto; Jun ichi Nishizawa

doi:10.1016/S0022-0248(02)01494-X

Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (T_g < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP (0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.

Original language	English
Pages (from-to)	267-274
Number of pages	8
Journal	Journal of Crystal Growth
Volume	243
Issue number	2
DOIs	https://doi.org/10.1016/S0022-0248(02)01494-X
Publication status	Published - 2002 Aug

Keywords

A1. Crystal morphology
A1. Growth models
A1. Surface structure
A3. Liquid phase exitaxy
B1. Phosphides
B2. Semiconducting Indium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)01494-X

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title = "Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP",

abstract = "The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (Tg < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP (0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.",

keywords = "A1. Crystal morphology, A1. Growth models, A1. Surface structure, A3. Liquid phase exitaxy, B1. Phosphides, B2. Semiconducting Indium compounds",

author = "Yutaka Oyama and Toshio Kochiya and Ken Suto and Nishizawa, {Jun ichi}",

year = "2002",

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doi = "10.1016/S0022-0248(02)01494-X",

language = "English",

volume = "243",

pages = "267--274",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP

AU - Oyama, Yutaka

AU - Kochiya, Toshio

AU - Suto, Ken

AU - Nishizawa, Jun ichi

PY - 2002/8

Y1 - 2002/8

N2 - The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (Tg < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP (0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.

AB - The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (Tg < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP (0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.

KW - A1. Crystal morphology

KW - A1. Growth models

KW - A1. Surface structure

KW - A3. Liquid phase exitaxy

KW - B1. Phosphides

KW - B2. Semiconducting Indium compounds

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U2 - 10.1016/S0022-0248(02)01494-X

DO - 10.1016/S0022-0248(02)01494-X

M3 - Article

AN - SCOPUS:0036680573

VL - 243

SP - 267

EP - 274

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -

Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP

Abstract

Keywords

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